Paper Titles

Electric-Dipole Spin Resonance of Defects Correlated with the Diffusion of ZN Into SI
p.1601

Enhanced Diffusion of Impurities into Solids by Electron Beam Doping
p.1607

Interstitials in Silicon Produced by Electron Beam Doping (Superdiffusion)
p.1613

Electron Energy Dependennce of Impurity Concentrations in Semiconductors by Electron Beam Doping (Superdiffusion)
p.1619

Surface Diffusion of Atoms by Electron Beam Doping (Superdiffusion)
p.1625

Dopant Diffusion and Stacking Fault in Silicon during Thermal Oxidation
p.1631

Influence of Simultaneously Implanted As⁺ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted into Silicon
p.1637

Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures
p.1643

Study of The Compensating Centres in GaAs:Te by Positron Annihilation
p.1649

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Surface Diffusion of Atoms by Electron Beam Doping...

Surface Diffusion of Atoms by Electron Beam Doping (Superdiffusion)

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1625-1630

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1625

Citation:

Cite this paper

Online since:

November 1995

Authors:

Takao Wada, Hiroshi Fujimoto, Haruho Masuda

Keywords:

Atomic Force Microscope (AFM), Electron Beam Doping, Free Atoms-Like, Surface Diffusion

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: