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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Paper Title Page

Defects in Porous Silicon: A Study with Optical and Spin Resonance Methodes

Authors: D.M. Hofmann, B.K. Meyer, P. Christmann, T. Wimbauer, W. Stadler, A. Nikolov, A. Scharmann, A. Hofstätter

1673

Oxygen Related Defect Centers: the Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous Silicon

Authors: S.M. Prokes, W.E. Carlos

1679

Review of the Influence of Micro Crystal Defects in Silicon Single Crystals on Gate Oxide Integrity

Authors: I. Fusegawa, K. Takano, Kaoru Kimura, N. Fujimaki

1683

Fundamentals of Point Defect Aggregation and Dissolution Phenomena of Crystal Originated Defects in Czochralski Silicon

Authors: W. Wijaranakula

1691

Nature of D-Defect in CZ Silicon: D-Defect Dissolution and D-Defect Related T.D.D.B

Authors: J.G. Park, J.K. Jung, K.C. Cho, George A. Rozgonyi

1697

Relationship between Grown-In Defects and Thermal History during CZ Si Crystal Growth

Authors: K. Takano, Kazuo Kitagawa, E. Lino, M. Kimura, H. Yamagishi

1707

Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals

Authors: M. Hourai, E. Kajita, T. Nagashima, H. Fujiwara, S. Umeno, S. Sadamitsu, Sakito Miki, T. Shigematsu

1713

Effect of Magnetic Field and Heat Treatment on the Grown-in Defects in MCZ Si Single Crystals

Authors: T.M. Tkacheva, G.N. Petrov, Leonid I. Datsenko

1719

Annealing Behavior of a Ligth ScatteringTomography Detected Defect near the Surface of Si Wafers

Authors: Jun Furukawa, Noriyuki Iwaoka, Hiroshi Furuya

1725

Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity

Authors: T. Iwasaki, Hiroshi Harada, Hiroyo Haga

1731