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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Table of Contents

Paper Title Page

Energy States of Deformation-Induced Dislocations in Silicon Crystals

Authors: H. Kusanagi, Takashi Sekiguchi, Koji Sumino

1195

Cathodoluminescence Study on Dislocation-Related Luminescence in Silicon

Authors: Takashi Sekiguchi, Koji Sumino

1201

Precipitation of Cu, Ni and Fe on Frank-Type Partial Dislocations in Czochralski-Grown Silicon

Authors: Bo Shen, Takashi Sekiguchi, Koji Sumino

1207

Effect of Transition Metal Impurities on the Photoluminescence of Deformed Si Crystal

Authors: Tomohito Okuyama, Masashi Suezawa, Ichiro Yonenaga, Koji Sumino

1213

New Effect of Interaction between Moving Dislocation and Point Defects in Silicon

Authors: V.G. Eremenko, A.V. Fedorov

1219

Computer Simulation Study on Dislocation Motion in Semiconductors

Authors: Kinichi Masuda-Jindo, Masato Aoki, A.P. Horsfield, David Pettifor

1225

Scratch-Related Effects on Silicon Surface

Authors: Y.G. Shreter, Y.T. Rebane, D.V. Tarhin, D. Cherns, John W. Steeds

1231

Study of Electron Irradiation-Induced Defects of 3c-SiC and Diamond by Ultra-High Voltage Electron Microscopy

Authors: Ryuichiro Oshima, Chou Y. Nie, Masao Komatsu, Hirotaro Mori

1237

Study on the Irradiation Induced Defects in 6H-SiC

Authors: N. Hayashi, H. Watanabe, Kazufumi Sakai, K. Kuriyama, Yasushi Ikeda, H. Maekawa, Tadamasa Miura

1243

Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy

Authors: A. Polity, C. Nagel, Reinhard Krause-Rehberg

1249