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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Study on the Irradiation Induced Defects in 6H-SiC

Study on the Irradiation Induced Defects in 6H-SiC

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1243-1248

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1243

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Online since:

November 1995

Authors:

N. Hayashi, H. Watanabe, Kazufumi Sakai, K. Kuriyama, Yasushi Ikeda, H. Maekawa, Tadamasa Miura

Keywords:

Neutron Irradiation, Photoluminescence (PL), Positron Annihilation, Proton Irradiation, Silicon Carbide (SiC)

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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