Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1249-1254

DOI:

10.4028/www.scientific.net/MSF.196-201.1249

Citation:

A. Polity et al., "Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy", Materials Science Forum, Vols. 196-201, pp. 1249-1254, 1995

Online since:

November 1995

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