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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Vacancy Type Defects inGaAs After Electron...

Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1249-1254

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1249

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Online since:

November 1995

Authors:

A. Polity, C. Nagel, Reinhard Krause-Rehberg

Keywords:

Defect, Electron Irradiation, GaAs, Positron Annihilation, Vacancy

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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