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Effect of Transition Metal Impurities on the Photoluminescence of Deformed Si Crystal
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Computer Simulation Study on Dislocation Motion in Semiconductors
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Scratch-Related Effects on Silicon Surface
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Study of Electron Irradiation-Induced Defects of 3c-SiC and Diamond by Ultra-High Voltage Electron Microscopy
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Study on the Irradiation Induced Defects in 6H-SiC
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Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy
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Ga-Vacancies and As_Ga-Antisites in Electron Irradiated GaAs
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Frenkel Pairs and P_In Antisites in Low Temperature Electron Irradiated InP
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Study of Electron Irradiation-Induced Defects of...

Study of Electron Irradiation-Induced Defects of 3c-SiC and Diamond by Ultra-High Voltage Electron Microscopy

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1237-1242

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1237

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Online since:

November 1995

Authors:

Ryuichiro Oshima, Chou Y. Nie, Masao Komatsu, Hirotaro Mori

Keywords:

Cubic Silicon Carbide (3C-SiC), Diamond, Electron Irradiaton-Induced Defect, Electron Microscopy

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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