Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

473-478

DOI:

10.4028/www.scientific.net/MSF.196-201.473

Citation:

W.M. Chen et al., "Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures", Materials Science Forum, Vols. 196-201, pp. 473-478, 1995

Online since:

November 1995

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$35.00

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