Paper Titles

Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells
p.449

Defect Related Recombination Processes in II-VI Quantum Wells
p.455

Magnetoelectronic States in Semiconductor / Antiferromagnet Superlattices
p.461

Shallow and Deep Centers in Heavily Doped Silicon Quantum Wells
p.467

Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures
p.473

Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers
p.479

Profiling the Deep Levels inSiGe/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy
p.485

Multiphonon Carrier Emission and Capture by Defects in Nanostructures
p.491

Adsorption of Antimony on Si(113) Surfaces: Ab-Initio Calculations and STM Investigations
p.497

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Important Nonradiative Grown-In Defects in...

Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

473-478

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.473

Citation:

Cite this paper

Online since:

November 1995

Authors:

W.M. Chen, I.A. Buyanova, Anne Henry, W.X. Ni, G.V. Hansson, Bo Monemar

Keywords:

Grown-in Defects, MBE, Nonradiative, ODMR, Silicon, Silicon-Germanium (SiGe)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: