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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Defect Formation and Recombination Processes in...

Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

479-484

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.479

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Online since:

November 1995

Authors:

I.A. Buyanova, W.M. Chen, Anne Henry, W.X. Ni, G.V. Hansson, Bo Monemar

Keywords:

Defect, Modulation-Doping, Photoluminescence (PL), Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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