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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Table of Contents

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Paper Title Page

Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs

Authors: M.A. Reshchikov, A.A. Gutkin, V.E. Sedov

237

Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates

Authors: H. Yoshida, Makoto Kiyama, T. Takebe, Masashi Yamashita, K. Fujita

243

Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States

Authors: J.I. Landman, C.G. Morgan, J.T. Schick, A. Kumar, P. Papoulias, M.F. Kramer

249

Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE

Authors: T.-C. Lin, S. Indou, T. Okumura

255

Thermal and Optical Emission Processes of Electrons and Holes from EL2 in N- and P-Type GaAs

Authors: Hideyo Okushi, Takashi Sekiguchi, Y. Tokumaru, Koji Sumino

261

Studies of Deep Levels in n-GaAs by SADLTS

Authors: K. Sato, K. Tanaka, J. Yoshino, Yoshihiro Okamoto, J. Morimoto, T. Miyakawa

267

Trends in the Metastability of DX-Centers

Authors: T.M. Schmidt, A. Fazzio, Marilia J. Caldas

273

Carrier Concentrations Saturation in n Type Al_xGa_1-xAs

Authors: A.Y. Du, Ming Fu Li, T.C. Chong, S.J. Chua

279

Doping Puzzles in II-VI and III-V Semiconductors

Authors: D.J. Chadi, C.H. Park

285

Theoretical Study on Hole Compensation Mechanism: - Stability of Two Nitrogen Atoms at SE Substitutional Site of ZNSE -

Authors: Taketoshi Nakao, Masakatsu Suzuki, Takeshi Uenoyama, Yusuke Funayose

293

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