Paper Titles

Effect of Growth Parameters on Iron Incorporation in Semi-Insulating LEC Indium Phosphide
p.1

Impurities Interactions in the Crystal Growth of LEC Gallium Arsenide
p.7

Growth Striations in GaAs as Revealed by DSL Photoetching
p.13

Impurity Segregation in the Growth of KF:Na⁺ Crystals
p.19

Bulk Crystllization Kinetics of New TPI (Thermoplastic Poly Imide) by Differential Calorimetric Analysis
p.25

A New Vapour Phase Growth Approach to Organic Crystals
p.31

Vapour Growth of Organic Crystals by a Semi-Open Pizzarello (SOP) Technique
p.35

Solution Growth Method for High Anisotropy Organic Crystals
p.39

HomeMaterials Science ForumMaterials Science Forum Vol. 203Effect of Growth Parameters on Iron Incorporation...

Effect of Growth Parameters on Iron Incorporation in Semi-Insulating LEC Indium Phosphide

Article Preview

Abstract:

You might also be interested in these eBooks

Advances in Crystal Growth

Info:

Periodical:

Materials Science Forum (Volume 203)

Pages:

1-6

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.203.1

Citation:

Cite this paper

Online since:

February 1996

Authors:

R. Fornari, M. Moriglioni, M. Thirumavalavan, A. Zappettini, M. Curti, G. Mignoni, M. Locci

Keywords:

Indium Phosphide, Iron Doping, LEC Growth, Semi-insulating (SI)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1996 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: