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Paper Titles
Foreword
Effect of Growth Parameters on Iron Incorporation in Semi-Insulating LEC Indium Phosphide
p.1
Impurities Interactions in the Crystal Growth of LEC Gallium Arsenide
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Growth Striations in GaAs as Revealed by DSL Photoetching
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Impurity Segregation in the Growth of KF:Na+ Crystals
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Bulk Crystllization Kinetics of New TPI (Thermoplastic Poly Imide) by Differential Calorimetric Analysis
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A New Vapour Phase Growth Approach to Organic Crystals
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Vapour Growth of Organic Crystals by a Semi-Open Pizzarello (SOP) Technique
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Solution Growth Method for High Anisotropy Organic Crystals
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Impurities Interactions in the Crystal Growth of LEC Gallium Arsenide

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Periodical:

Materials Science Forum (Volume 203)

Pages:

7-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.203.7

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Online since:

February 1996

Authors:

C. Mucchino, T. Görög, L. Zanotti, G. Mignoni, A. Catellani

Keywords:

Bulk Growth, GaAs, Impurity Distribution Coefficient, Melt Contamination, Si Doping Procedures

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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