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HomeMaterials Science ForumMaterials Science Forum Vol. 203Growth Striations in GaAs as Revealed by DSL...

Growth Striations in GaAs as Revealed by DSL Photoetching

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Advances in Crystal Growth

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Periodical:

Materials Science Forum (Volume 203)

Pages:

13-18

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.203.13

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Online since:

February 1996

Authors:

E. Gilioli, J.L. Weyher, L. Zanotti, C. Mucchino

Keywords:

Bulk Growth, Chemical Etching, DSL, GaAs, Interface Shape, Striations, Substrate Characterization

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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