Growth Striations in GaAs as Revealed by DSL Photoetching

Abstract:

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Periodical:

Edited by:

A.M. Mancini, C. Paorici and M.L. Terranova

Pages:

13-18

DOI:

10.4028/www.scientific.net/MSF.203.13

Citation:

E. Gilioli et al., "Growth Striations in GaAs as Revealed by DSL Photoetching", Materials Science Forum, Vol. 203, pp. 13-18, 1996

Online since:

February 1996

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$35.00

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