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HomeMaterials Science ForumMaterials Science Forum Vol. 203Growth and Characterization of InGaAsP/InGaAs MQW...

Growth and Characterization of InGaAsP/InGaAs MQW Structures Grown by MOCVD Technique

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Advances in Crystal Growth

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Periodical:

Materials Science Forum (Volume 203)

Pages:

103-108

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.203.103

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Online since:

February 1996

Authors:

A. Antolini, G. Fornuto, C. Papuzza, D. Soldani, F. Taiariol

Keywords:

InGaAs, InGaAsP, LP-MOCVD, MQW

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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