Paper Titles

Lattice Strain Analysis of VPE-Grown ZnS Epitaxial Layers on (001) GaAs by RBS - Channeling and High Resolution XRD Measurements
p.237

Comparison between Optical and Structural Properties of ZnSe/GaAs(001) Heterostructures Grown by MBE under Different Beam Pressure Ratios
p.243

Optical and Structural Characterization of Single Quantum Wells of InGaAs on GaAs MOCVD Grown Both on Exactly Oriented and Misoriented Substrates
p.249

Optical Investigation on Delta Doped PHEMT Structures
p.255

Optical Properties of Zn_1-xCd_xSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy
p.261

Optical and Electrical Properties of ZnOCdTe Thin Films
p.267

SIMS-ETAAS Characterisation of Background Impurites in CdZnTe Bulk Samples
p.273

XPS and EPMA Study of CVD Diamond, Hydrogenated Amorphous Carbon and Graphite Films
p.279

Microstructure and Phase Morphology of Diamond Thin Films by Synchrotron Radiation X-Ray Diffraction
p.285

HomeMaterials Science ForumMaterials Science Forum Vol. 203Optical Properties of Zn1-xCdxSe/ZnSe Quantum Well...

Optical Properties of Zn_1-xCd_xSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy

Article Preview

Abstract:

You might also be interested in these eBooks

Advances in Crystal Growth

Info:

Periodical:

Materials Science Forum (Volume 203)

Pages:

261-266

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.203.261

Citation:

Cite this paper

Online since:

February 1996

Authors:

L. Calcagnile, G. Colì, R. Cingolani, L. Vanzetti, L. Sorba, A. Franciosi

Keywords:

Excitonic Properties, II-VI Quantum Wells, Lasing

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1996 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: