Paper Titles

Crystal-Field Transitions of Nd³⁺ and Er³⁺ in Perovskite-Type Crystals
p.1589

Excitation and De-Excitation of Erbium Ions in Semiconductor Matrices
p.1595

Mechanism of Generation of F-F Radiation in Semiconductor Heterostructures
p.1601

Infrared Induced Emission From Silicon Quantum Wires
p.1607

Acceptor States in Boron Doped SiGe Quantum Wells
p.1613

Coulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on Point Defects
p.1619

Influence of Erbium Doping on Structure and Optical Properties of the InGaAs/GaAs Superlattices
p.1625

Defect Formation During Laser Induced Intermixing of GaAs/AlGaAs Multiple-Quantum-Well Structures
p.1631

Localized Epitaxy for Vertical Cavity Surface Emitting Laser Applications
p.1637

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Acceptor States in Boron Doped SiGe Quantum Wells

Acceptor States in Boron Doped SiGe Quantum Wells

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1613-1618

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1613

Citation:

Cite this paper

Online since:

December 1997

Authors:

K. Schmalz, M.S. Kagan, I.V. Altukhov, K.A. Korolev, Dmitry Orlov, V.P. Sinis, S.G. Tomas, K.L. Wang, I.N. Yassievich

Keywords:

Acceptor States, SiGe Quantum Wells, Transport Property

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: