Paper Titles

Luminescence and Annealing Studies of Er-Implanted GaN with and without Oxygen Co-Doping
p.1577

Er-Luminescence in MBE-Grown AlGaAs
p.1583

Crystal-Field Transitions of Nd³⁺ and Er³⁺ in Perovskite-Type Crystals
p.1589

Excitation and De-Excitation of Erbium Ions in Semiconductor Matrices
p.1595

Mechanism of Generation of F-F Radiation in Semiconductor Heterostructures
p.1601

Infrared Induced Emission From Silicon Quantum Wires
p.1607

Acceptor States in Boron Doped SiGe Quantum Wells
p.1613

Coulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on Point Defects
p.1619

Influence of Erbium Doping on Structure and Optical Properties of the InGaAs/GaAs Superlattices
p.1625

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Mechanism of Generation of F-F Radiation in...

Mechanism of Generation of F-F Radiation in Semiconductor Heterostructures

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1601-1606

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1601

Citation:

Cite this paper

Online since:

December 1997

Authors:

G.G. Zegrya, V.F. Masterov

Keywords:

Auger Excitation, Er³⁺-Doped Quantum Wells, Laser

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: