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Erbium Related Defects in Gallium Arsenide
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Electron Spin Resonance of Er-Oxygen Complexes in GaAs
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Er Centers in GaAs Studied by Optical Spectroscopy Under Hydrostatic Pressure
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EXAFS Measurement on Local Structure Around Erbium Atoms Doped in GaAs with Oxygen Co-Doping
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Luminescence and Annealing Studies of Er-Implanted GaN with and without Oxygen Co-Doping
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Er-Luminescence in MBE-Grown AlGaAs
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Crystal-Field Transitions of Nd³⁺ and Er³⁺ in Perovskite-Type Crystals
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Excitation and De-Excitation of Erbium Ions in Semiconductor Matrices
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Mechanism of Generation of F-F Radiation in Semiconductor Heterostructures
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Luminescence and Annealing Studies of Er-Implanted...

Luminescence and Annealing Studies of Er-Implanted GaN with and without Oxygen Co-Doping

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1577-1582

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1577

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Online since:

December 1997

Authors:

E. Silkowski, Y.K. Yeo, R.L. Hengehold, L.R. Everitt

Keywords:

Erbium, Gallium Nitride (GaN), Ion Implantation, Photoluminescence (PL)

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Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

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