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Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals
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1.54 μm Luminescence in Er and Er+O Implanted 6H SiC
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Erbium Related Defects in Gallium Arsenide
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Electron Spin Resonance of Er-Oxygen Complexes in GaAs
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Er Centers in GaAs Studied by Optical Spectroscopy Under Hydrostatic Pressure
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EXAFS Measurement on Local Structure Around Erbium Atoms Doped in GaAs with Oxygen Co-Doping
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Luminescence and Annealing Studies of Er-Implanted GaN with and without Oxygen Co-Doping
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Er Centers in GaAs Studied by Optical Spectroscopy...

Er Centers in GaAs Studied by Optical Spectroscopy Under Hydrostatic Pressure

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1565-1570

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1565

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Online since:

December 1997

Authors:

R.A. Hogg, Akihito Taguchi, Kenichiro Takahei

Keywords:

ER, GaAs, Hydrostatic Pressure, Impurity Levels, O, Photoluminescence (PL)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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