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Structural Defects and Photoluminescence in Dislocation-Rich Erbium-Doped Silicon
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High Temperature Luminescence Due to Er in Porous Si
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Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals
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1.54 μm Luminescence in Er and Er+O Implanted 6H SiC
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Erbium Related Defects in Gallium Arsenide
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Electron Spin Resonance of Er-Oxygen Complexes in GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-2631.54 μm Luminescence in Er and Er+O Implanted 6H...

1.54 μm Luminescence in Er and Er+O Implanted 6H SiC

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1545-1550

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1545

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Online since:

December 1997

Authors:

A. Kozanecki, W. Jantsch, S. Lanzerstorfer, Brian J. Sealy, S. Jackson

Keywords:

Erbium Centres, Fourier-Transform Spectroscopy, Silicon Carbide (SiC)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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