Paper Titles

Donor Centers in Er-Implanted Silicon
p.1515

Structural Defects and Photoluminescence in Dislocation-Rich Erbium-Doped Silicon
p.1521

Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures
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High Temperature Luminescence Due to Er in Porous Si
p.1533

Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals
p.1539

1.54 μm Luminescence in Er and Er+O Implanted 6H SiC
p.1545

Erbium Related Defects in Gallium Arsenide
p.1551

Electron Spin Resonance of Er-Oxygen Complexes in GaAs
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Er Centers in GaAs Studied by Optical Spectroscopy Under Hydrostatic Pressure
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Electron Paramagnetic Resonance of Erbium in Bulk...

Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1539-1544

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1539

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Online since:

December 1997

Authors:

P.G. Baranov, Ivan V. Ilyin, E.N. Mokhov

Keywords:

Electron Paramagnetic Resonance (EPR), Rare Earth Impurities, Silicon Carbide (SiC)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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