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1.54 μm Luminescence in Er and Er+O Implanted 6H SiC
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Erbium Related Defects in Gallium Arsenide
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Electron Spin Resonance of Er-Oxygen Complexes in GaAs
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Er Centers in GaAs Studied by Optical Spectroscopy Under Hydrostatic Pressure
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Erbium Related Defects in Gallium Arsenide

Erbium Related Defects in Gallium Arsenide

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1551-1558

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1551

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Online since:

December 1997

Authors:

Anthony R. Peaker, F. Coppinger, H. Efeoglu, J.H. Evans-Freeman, D.K. Maude, Jean Claude Portal, P. Rutter, K.E. Singer, A. Scholes, Adrian C. Wright

Keywords:

Defect, DLTS, Erbium, Gallium Arsenide, Luminescence, Quantum Dot (QD), Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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