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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263EXAFS Measurement on Local Structure Around Erbium...

EXAFS Measurement on Local Structure Around Erbium Atoms Doped in GaAs with Oxygen Co-Doping

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1571-1576

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1571

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Online since:

December 1997

Authors:

M. Tabuchi, H. Ofuchi, T. Kubo, Kenichiro Takahei, Yoshikazu Takeda

Keywords:

Co-Doping, Erbium, EXAFS, GaAs, Local-Structure, Oxygen

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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