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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Er Diffusion and Er-Induced Ga-Al Interdiffusion...

Er Diffusion and Er-Induced Ga-Al Interdiffusion in GaAs/AlGaAs Quantum Structures

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1701-1706

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1701

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Online since:

December 1997

Authors:

M.S. Bresler, B.Ya. Ber, Oleg B. Gusev, E.K. Lindmark, J.P. Prineas, H.M. Gibbs, G. Khitrova, V.F. Masterov, I.N. Yassievich, B.P. Zakharchenya

Keywords:

Erbium, GaAs/AlGaAs Quantum Structures, Interdiffusion

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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