Paper Titles

Er Diffusion and Er-Induced Ga-Al Interdiffusion in GaAs/AlGaAs Quantum Structures
p.1701

Ground and Excited States of Dˉ Centres in Semiconductor Quantum Dots
p.1707

Electron Spin Resonance Features of the P_b1 Interface Defect in Thermal (100)Si/SiO₂
p.1713

Silicon Surface Defects: The Roles of Passivation and Surface Contamination
p.1719

Heat-Treatment Induced Modifications of Porous Silicon
p.1725

Luminescence Due to Electron-Hole Condensation in Silicon-On-Insulator and its Application to Defect and Interface Characterization
p.1731

Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth Modes
p.1737

TEM-Study of Frank Partial Dislocations in ZnSe/GaAs(001) Caused by Substrate-Preparation
p.1743

Defect Formation and Electronic Transport at AlGaN/GaN Interfaces
p.1749

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Heat-Treatment Induced Modifications of Porous...

Heat-Treatment Induced Modifications of Porous Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1725-1730

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1725

Citation:

Cite this paper

Online since:

December 1997

Authors:

S. Dannefaer, C. Wiebe, D. Kerr

Keywords:

Porous Silicon (PS), Positron Annihilation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: