Paper Titles

Electron Spin Resonance Features of the P_b1 Interface Defect in Thermal (100)Si/SiO₂
p.1713

Silicon Surface Defects: The Roles of Passivation and Surface Contamination
p.1719

Heat-Treatment Induced Modifications of Porous Silicon
p.1725

Luminescence Due to Electron-Hole Condensation in Silicon-On-Insulator and its Application to Defect and Interface Characterization
p.1731

Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth Modes
p.1737

TEM-Study of Frank Partial Dislocations in ZnSe/GaAs(001) Caused by Substrate-Preparation
p.1743

Defect Formation and Electronic Transport at AlGaN/GaN Interfaces
p.1749

Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al₂O₃(0001) Studied by TEM
p.1755

Formation Kinetics of the Al-Related Shallow Thermal Donors: A Probe for Oxygen Diffusion in Silicon
p.1761

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Deep Electronic States at the Inverted AlAs/GaAs...

Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth Modes

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1737-1742

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1737

Citation:

Cite this paper

Online since:

December 1997

Authors:

P. Krispin, R. Hey, H. Kostial, K. Ploog

Keywords:

AlAs Growth Modes, GaAs-on-AlAs Interface, Intrinsic Deep-Level Defects

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: