Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth Modes

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

1737-1742

DOI:

10.4028/www.scientific.net/MSF.258-263.1737

Citation:

P. Krispin et al., "Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth Modes", Materials Science Forum, Vols. 258-263, pp. 1737-1742, 1997

Online since:

December 1997

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$35.00

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