Paper Titles

Luminescence Due to Electron-Hole Condensation in Silicon-On-Insulator and its Application to Defect and Interface Characterization
p.1731

Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth Modes
p.1737

TEM-Study of Frank Partial Dislocations in ZnSe/GaAs(001) Caused by Substrate-Preparation
p.1743

Defect Formation and Electronic Transport at AlGaN/GaN Interfaces
p.1749

Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al₂O₃(0001) Studied by TEM
p.1755

Formation Kinetics of the Al-Related Shallow Thermal Donors: A Probe for Oxygen Diffusion in Silicon
p.1761

Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
p.1767

The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon
p.1773

EPR Evidence of Hydrogen-Enhanced Diffusion of Aluminum in Silicon
p.1777

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Characterization of the Relaxation by Misfit...

Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al₂O₃(0001) Studied by TEM

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1755-1760

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1755

Citation:

Cite this paper

Online since:

December 1997

Authors:

S. Kaiser, Herbert Preis, Oliver Ambacher, W. Gebhardt

Keywords:

Al₂O₃, Confinement, Gallium Nitride (GaN), High Resolution Transmission Electron Microscopy, MBE, Misfit Dislocation, Relaxation, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: