Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001) Studied by TEM

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

1755-1760

DOI:

10.4028/www.scientific.net/MSF.258-263.1755

Citation:

S. Kaiser et al., "Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001) Studied by TEM", Materials Science Forum, Vols. 258-263, pp. 1755-1760, 1997

Online since:

December 1997

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