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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Defect Formation and Electronic Transport at...

Defect Formation and Electronic Transport at AlGaN/GaN Interfaces

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1749-1754

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1749

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Online since:

December 1997

Authors:

L. Hsu, W. Walukiewicz, Eugene E. Haller

Keywords:

Gallium Nitride (GaN), Heterostructures, Modulation Doping, Two-Dimensional Electron Gas

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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