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Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263The Influence of Isovalent Doping on Diffusion of...

The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1773-1776

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1773

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Online since:

December 1997

Authors:

Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov

Keywords:

Elastic Continuum, Elastic Stresses, Isovalent Impurities, Potential Barrier Height, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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