The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

1773-1776

DOI:

10.4028/www.scientific.net/MSF.258-263.1773

Citation:

L. I. Khirunenko et al., "The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon", Materials Science Forum, Vols. 258-263, pp. 1773-1776, 1997

Online since:

December 1997

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$35.00

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