Paper Titles

The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon
p.1773

EPR Evidence of Hydrogen-Enhanced Diffusion of Aluminum in Silicon
p.1777

Segregation of Gold at Dislocations Confirmed by Gold Diffusion into Highly Dislocated Silicon
p.1783

Annealing of Low-Temperature Substitutional Gold in Silicon: Ring-Diffusion of Substitutional Gold in Silicon
p.1789

Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline Silicon
p.1795

Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology
p.1801

Influence of the Dislocation Loops on the Anomalous Diffusion of Fe Implanted into InP
p.1807

Lithium Induced Vacancy Formation and its Effect on the Diffusivity of Lithium in Gallium Arsenide
p.1813

Ab-Initio Investigations on Diffusion of Halogen Atoms in GaAs
p.1821

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Rate Limiting Mechanism of Transition Metal...

Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1795-1800

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1795

Citation:

Cite this paper

Online since:

December 1997

Authors:

Scott A. McHugo, A.C. Thompson, Masayuki Imaizumi, H. Hieslmair, Eicke R. Weber

Keywords:

Dislocation, Gettering, Multicrystalline Silicon, Transition Metal, X-Ray Fluorescence (XRF)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: