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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Ab-Initio Investigations on Diffusion of Halogen...

Ab-Initio Investigations on Diffusion of Halogen Atoms in GaAs

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1821-1826

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1821

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Online since:

December 1997

Authors:

Takahisa Ohno, Taizo Sasaki, Akihito Taguchi

Keywords:

Ab Initio Calculation, Chlorine, Diffusion, Fluorine, GaAs, Halogen, Passivation

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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