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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Intrinsic Point Defect Engineering in Silicon...

Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1801-1806

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1801

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Online since:

December 1997

Authors:

N.A. Sobolev

Keywords:

Defect Formation, Intrinsic Point Defects (IPD), Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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