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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Background Doping Effects on Zn Diffusion in...

Background Doping Effects on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1839-0

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1839

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Online since:

December 1997

Authors:

Nguyen Hong Ky

Keywords:

Column-III Vacancies and Interstitials, Doping Effect, GaAs/AlGaAs, Zn Diffusion

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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