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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263TEM-Study of Frank Partial Dislocations in...

TEM-Study of Frank Partial Dislocations in ZnSe/GaAs(001) Caused by Substrate-Preparation

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1743-1748

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1743

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Online since:

December 1997

Authors:

Herbert Preis, Tobias Frey, T. Reisinger, W. Gebhardt

Keywords:

Frank Partial Dislocations, GaAs, Hydrogen, MBE, QMS, RHEED, TEM, ZnSe

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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