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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Identification of VH in Silicon by EPR

Identification of VH in Silicon by EPR

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

515-520

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.515

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Online since:

December 1997

Authors:

P. Johannesen, J.R. Byberg, Brian Bech Nielsen, Peter Stallinga, K. Bonde Nielsen

Keywords:

Dangling Bond, Electronic Properties, EPR, Hydrogen, Point Defect, Silicon, Vacancy

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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