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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Modeling of Self-Interstitial Clusters and their...

Modeling of Self-Interstitial Clusters and their Formation Mechanism in Si

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

535-540

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.535

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Online since:

December 1997

Authors:

S. Takeda, Norio Arai, J. Yamasaki

Keywords:

Clustering, Self-Interstitial, Silicon, Total Energy Calculation

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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