Application of Spin Dependent Recombination for Investigation of Point Defects in Irradiated Silicon

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

559-564

DOI:

10.4028/www.scientific.net/MSF.258-263.559

Citation:

M.M. Afanasjev et al., "Application of Spin Dependent Recombination for Investigation of Point Defects in Irradiated Silicon", Materials Science Forum, Vols. 258-263, pp. 559-564, 1997

Online since:

December 1997

Export:

Price:

$35.00

In order to see related information, you need to Login.