Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

565-570

DOI:

10.4028/www.scientific.net/MSF.258-263.565

Citation:

P. N.K. Deenapanray et al., "Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment", Materials Science Forum, Vols. 258-263, pp. 565-570, 1997

Online since:

December 1997

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