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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Electrical and Optical Characterisation of Defects...

Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

565-570

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.565

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Online since:

December 1997

Authors:

Prakash N.K. Deenapanray, F. Danie Auret, G. Myburg, W.E. Meyer, S.A. Goodman

Keywords:

C- and O-Related Defects, DLTS, Noble Gas Ion Bombardment, Photoluminescence (PL)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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