Paper Titles

Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment
p.565

Fano Resonance in a Vibronic Sideband in Silicon
p.571

Frenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low Temperatures
p.575

Impurity-Vacancy Complexes Formed by Electron Irradiation of Czochralski Silicon
p.581

Luminescence Centers in High-Energy Ion-Implanted Silicon
p.587

Performance Degradation of Microcrystalline Silicon-Based p-i-n Detectors Upon He⁴ Irradiation
p.593

Persistent Excited Conductivity Induced by Proton Irradiation in a-Si:H
p.599

Photoluminescence Centers Associated with Noble-Gas Impurities in Silicon
p.605

Implantation of Reactive and Unreactive Ions in Silicon
p.611

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Luminescence Centers in High-Energy Ion-Implanted...

Luminescence Centers in High-Energy Ion-Implanted Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

587-592

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.587

Citation:

Cite this paper

Online since:

December 1997

Authors:

Koichi Terashima, Taeko Ikarashi, Masahito Watanabe, Tomohisa Kitano

Keywords:

Cu Contamination, Ion Implantation, Photoluminescence (PL), Point Defect, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: