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Luminescence Centers in High-Energy Ion-Implanted Silicon
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Performance Degradation of Microcrystalline Silicon-Based p-i-n Detectors Upon He⁴ Irradiation
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Persistent Excited Conductivity Induced by Proton Irradiation in a-Si:H
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Photoluminescence Centers Associated with Noble-Gas Impurities in Silicon
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Implantation of Reactive and Unreactive Ions in Silicon
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Photoluminescence Vibrational Spectroscopy of Defects Containing the Light Impurities Carbon and Oxygen in Silicon
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Raman Scattering Measurements in Neutron-Irradiated Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Persistent Excited Conductivity Induced by Proton...

Persistent Excited Conductivity Induced by Proton Irradiation in a-Si:H

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

599-604

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.599

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Online since:

December 1997

Authors:

H. Amekura, N. Kishimoto, K. Kono

Keywords:

a-Si:H, PEC, Radiation Damage, Radiation Induced Conductivity, Staebler-Wronski Effect

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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