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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Photoluminescence Centers Associated with...

Photoluminescence Centers Associated with Noble-Gas Impurities in Silicon

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

605-610

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.605

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Online since:

December 1997

Authors:

Stefan K. Estreicher, Joerg Weber

Keywords:

Noble-Gas Impurities, Photoluminescence (PL), Silicon, Theory, Vacancy

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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