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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Recombination Centers in Electron Irradiated Si...

Recombination Centers in Electron Irradiated Si and GaAs

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

629-634

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.629

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Online since:

December 1997

Authors:

J.C. Bourgoin, M. Zazoui, M.A. Zaidi

Keywords:

GaAs, Lifetime, Recombination Centers, Silicon, Solar Cell, Space Degradation

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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