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Application of Spin Dependent Recombination for Investigation of Point Defects in Irradiated Silicon
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Fano Resonance in a Vibronic Sideband in Silicon
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Frenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low Temperatures
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Impurity-Vacancy Complexes Formed by Electron Irradiation of Czochralski Silicon
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Luminescence Centers in High-Energy Ion-Implanted Silicon
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Performance Degradation of Microcrystalline Silicon-Based p-i-n Detectors Upon He⁴ Irradiation
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Persistent Excited Conductivity Induced by Proton Irradiation in a-Si:H
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Photoluminescence Centers Associated with Noble-Gas Impurities in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Impurity-Vacancy Complexes Formed by Electron...

Impurity-Vacancy Complexes Formed by Electron Irradiation of Czochralski Silicon

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

581-586

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.581

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Online since:

December 1997

Authors:

V. Avalos, S. Dannefaer

Keywords:

Irradiation Damage, Positron Annihilation, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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