High Resolution EELS Study of Extended Defects in Silicon

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

547-552

DOI:

10.4028/www.scientific.net/MSF.258-263.547

Citation:

H. Kohno et al., "High Resolution EELS Study of Extended Defects in Silicon", Materials Science Forum, Vols. 258-263, pp. 547-552, 1997

Online since:

December 1997

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Price:

$35.00

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