Paper Titles

Vacancy-Type Defects in Proton-Irradiated SiC
p.733

Theoretical Studies on Defects in SiC
p.739

Formation and Relaxation of Hydrogen-Related Defects in the Subsurface Region of Diamond Films
p.745

Hydrogen and Hydrogen-Like Defects in Diamond
p.751

Fine Structure of the Boron Bound Exciton in Diamond
p.757

Investigation of Ion-Implanted Boron in Diamond
p.763

Isotopic Shifts of the N3 Optical Transition in Diamond
p.769

Breakdown of the Vacancy Model for Impurity-Vacancy Defects in Diamond
p.775

A First Principles Study of Interstitial Si in Diamond
p.781

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Fine Structure of the Boron Bound Exciton in...

Fine Structure of the Boron Bound Exciton in Diamond

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

757-762

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.757

Citation:

Cite this paper

Online since:

December 1997

Authors:

H. Sternschulte, S. Wahl, Klaus Thonke, R. Sauer, T. Ruf, M. Cardona, T.R. Anthony

Keywords:

Boron Bound Exciton, Cathodoluminescence, Diamond, Fine Structure

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: