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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Breakdown of the Vacancy Model for...

Breakdown of the Vacancy Model for Impurity-Vacancy Defects in Diamond

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

775-780

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.775

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Online since:

December 1997

Authors:

R. Jones, Jonathan P. Goss, Patrick R. Briddon, Sven Öberg

Keywords:

Ab Initio Calculation, Diamond, Vacancy Impurity Complexes, Vacancy Model

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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