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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Valence Controls and Codoping for Low-Resistivity...

Valence Controls and Codoping for Low-Resistivity n-Type Diamond by Ab Initio Molecular-Dynamics Simulation

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

799-804

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.799

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Online since:

December 1997

Authors:

Takeshi Nishimatsu, Hiroshi Katayama-Yoshida, Nozomi Orita

Keywords:

Ab Initio Calculation, Co-Doping, Low-Resistivity Diamond, n-Type Diamond

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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