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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Pressure Dependent Two-Dimensional Electron...

Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

813-818

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.813

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Online since:

December 1997

Authors:

Dariusz Wasik, L. Dmowski, J. Mikucki, J. Lusakowski, L. Hsu, W. Walukiewicz, W.G. Bi, C.W. Tu

Keywords:

Heterostructures, InGaAs, InP, Pressure

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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