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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Osmium Related Deep Levels in p-InP and their...

Osmium Related Deep Levels in p-InP and their Interaction with Alpha Radiation

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

831-836

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.831

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Online since:

December 1997

Authors:

Shazia Parveen, Aurangzeb Khan, Umar S. Qurashi, N. Zafar, M. Zafar Iqbal, L. Köhne, Armin Dadgar, Dieter Bimberg

Keywords:

Defect Complexes, InP, Radiation Effects, Transition Metal Impurities

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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