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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Structure and Reorientation of the SiAs-H and...

Structure and Reorientation of the Si_As-H and Zn_Ga-H Complexes in Gallium Arsenide

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

855-860

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.855

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Online since:

December 1997

Authors:

Aldo Amore Bonapasta, Paolo Giannozzi, Mario Capizzi

Keywords:

Dopant, Gallium Arsenide, Hydrogen

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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