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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Ga Vacancies as Compensating Centers in...

Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

879-884

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.879

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Online since:

December 1997

Authors:

T. Laine, Kimmo Saarinen, Pekka J. Hautojärvi, C. Corbel

Keywords:

Compensation, Positron Spectroscopy, Superlattice

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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