Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

879-884

DOI:

10.4028/www.scientific.net/MSF.258-263.879

Citation:

T. Laine et al., "Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers", Materials Science Forum, Vols. 258-263, pp. 879-884, 1997

Online since:

December 1997

Export:

Price:

$35.00

In order to see related information, you need to Login.