Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

879-884

Citation:

T. Laine et al., "Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers", Materials Science Forum, Vols. 258-263, pp. 879-884, 1997

Online since:

December 1997

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$38.00

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